Download PDF by Michel Houssa, Athanasios Dimoulas, Alessandro Molle: 2D materials for nanoelectronics

By Michel Houssa, Athanasios Dimoulas, Alessandro Molle

ISBN-10: 1498704182

ISBN-13: 9781498704182

"Major advancements within the semiconductor are at the horizon by using 2nd fabrics akin to graphene and transition steel dichalcogenides for built-in circuits. This booklet offers the 1st accomplished remedy of the sector with an emphasis on purposes in nanoelectronic units. Chapters are divided by means of the 3 significant households of such fabrics, masking graphene for analog and photonic Read more...

summary: "Major advancements within the semiconductor are at the horizon by using second fabrics corresponding to graphene and transition steel dichalcogenides for built-in circuits. This booklet offers the 1st complete remedy of the sector with an emphasis on purposes in nanoelectronic units. Chapters are divided by means of the 3 significant households of such fabrics, masking graphene for analog and photonic functions, MoS2 (molybdenum disulfide) for good judgment functions and novel fabrics akin to silicene, germanene, stanene and phosphorene"

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Novoselov and A. K. Geim, Nat. Phys. 2, 620, 2006. 19. E. Fradkin, Phys. Rev. B 33, 3263, 1986. 20. E. V. Gorbar, V. P. Gusynin, V. A. Miransky and I. A. Shovkovy, Phys. Rev. B 66, 045108, 2002. 21. M. I. Katsnelson, Eur. Phys. J. B 57, 225, 2007. 22. J. Tworzydlo, B. Trauzettel, M. Titov, A. Rycerz and C. W. J. Beenakker, Phys. Rev. Lett. 96, 246802, 2006. 23. K. Ziegler, Phys. Rev. Lett. 80, 3113, 1998. 24. P. M. Ostrovsky, I. V. Gornyi and A. D. Mirlin, Phys. Rev. B 74, 235443, 2006. 25. J. H.

The series of surface reconstructions are listed below:16 1000 °C 1080° C (3 × 3) → (1 × 1) → ( 3 × 3 ) → (6 3 × 6 3 ) + Graphene The process starts with a hydrogen-etched sample and the preparation of the Si-rich (3 × 3) phase. Heating this surface to about 950°C leads to a ( 3 × 3 )R 30° phase. This phase can be considered as a 1/3 monolayer of Si adatoms atop the SiC substrate. Further annealing to 1100–1150°C sublimes more silicon from the surface and leads to the formation of a well-ordered (6 3 × 6 3 )R 30° phase, in which the SiC is covered by a carbon layer.

D. Mermin, Phys. Rev. 176, 250, 1968. J. C. Meyer, A. K. Geim, M. I. Katsnelson, K. S. Novoselov, T. J.  Roth, Nature 446, 60, 2007. 10. A. Fasolino, J. H. Los and M. I. Katsnelson, Nat. Mater. 6, 858, 2007. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos and A. A. Firsov, Nature 438, 197, 2005. 12. Y. Zhang, Y. Tan, H. L. Stormer and P. Kim, Nature 438, 201, 2005. 13. P. R. Wallace, Phys. Rev. 71, 622, 1947. 14. G. W. Semenoff, Phys. Rev.

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2D materials for nanoelectronics by Michel Houssa, Athanasios Dimoulas, Alessandro Molle


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