By Michel Houssa, Athanasios Dimoulas, Alessandro Molle
"Major advancements within the semiconductor are at the horizon by using 2nd fabrics akin to graphene and transition steel dichalcogenides for built-in circuits. This booklet offers the 1st accomplished remedy of the sector with an emphasis on purposes in nanoelectronic units. Chapters are divided by means of the 3 significant households of such fabrics, masking graphene for analog and photonic purposes, MoS2 (molybdenum disulfide) for common sense purposes and novel fabrics similar to silicene, germanene, stanene and phosphorene"-- Read more...
summary: "Major advancements within the semiconductor are at the horizon by using second fabrics corresponding to graphene and transition steel dichalcogenides for built-in circuits. This booklet offers the 1st complete remedy of the sector with an emphasis on purposes in nanoelectronic units. Chapters are divided by means of the 3 significant households of such fabrics, masking graphene for analog and photonic functions, MoS2 (molybdenum disulfide) for good judgment functions and novel fabrics akin to silicene, germanene, stanene and phosphorene"
Read or Download 2D materials for nanoelectronics PDF
Similar electronics books
Using lithium niobate in sign filtering in television units and video cassette recorders is easily tested and it's discovering elevated program in optoelectronic modulation units in DWDM (dense wavelength department multiplexing) fibre optic structures. a lot LiNbO3 study has taken position lately.
Experiments for electronic basics
Dimension of actual amounts and tools that reduction thereof, are on the middle of the engineering precept. The textual content, electric and electronics measurements and instrumentation, captures the gamut of crucial measurements required within the fields of electric and electronics engineering and gives a accomplished discourse at the ideas of the tools used for such measurements.
With the arrival of microprocessors and digital-processing applied sciences as catalyst, classical sensors able to uncomplicated sign conditioning operations have developed speedily to tackle better and extra really good services together with validation, repayment, and type. This new class of sensor expands the scope of incorporating intelligence into instrumentation structures, but with such speedy alterations, there has constructed no common average for layout, definition, or requirement with which to unify clever instrumentation.
- Biopolymer Composites in Electronics
- Electronics - A Complete Course (2nd Edition)
- Switchmode Power Supply Handbook (3rd Edition)
- Modern measurements : fundamentals and applications
- Frontiers in Electronics: Proceedings of the WOFE-04
- Connections: Patterns of Discovery
Additional resources for 2D materials for nanoelectronics
Novoselov and A. K. Geim, Nat. Phys. 2, 620, 2006. 19. E. Fradkin, Phys. Rev. B 33, 3263, 1986. 20. E. V. Gorbar, V. P. Gusynin, V. A. Miransky and I. A. Shovkovy, Phys. Rev. B 66, 045108, 2002. 21. M. I. Katsnelson, Eur. Phys. J. B 57, 225, 2007. 22. J. Tworzydlo, B. Trauzettel, M. Titov, A. Rycerz and C. W. J. Beenakker, Phys. Rev. Lett. 96, 246802, 2006. 23. K. Ziegler, Phys. Rev. Lett. 80, 3113, 1998. 24. P. M. Ostrovsky, I. V. Gornyi and A. D. Mirlin, Phys. Rev. B 74, 235443, 2006. 25. J. H.
The series of surface reconstructions are listed below:16 1000 °C 1080° C (3 × 3) → (1 × 1) → ( 3 × 3 ) → (6 3 × 6 3 ) + Graphene The process starts with a hydrogen-etched sample and the preparation of the Si-rich (3 × 3) phase. Heating this surface to about 950°C leads to a ( 3 × 3 )R 30° phase. This phase can be considered as a 1/3 monolayer of Si adatoms atop the SiC substrate. Further annealing to 1100–1150°C sublimes more silicon from the surface and leads to the formation of a well-ordered (6 3 × 6 3 )R 30° phase, in which the SiC is covered by a carbon layer.
D. Mermin, Phys. Rev. 176, 250, 1968. J. C. Meyer, A. K. Geim, M. I. Katsnelson, K. S. Novoselov, T. J. Roth, Nature 446, 60, 2007. 10. A. Fasolino, J. H. Los and M. I. Katsnelson, Nat. Mater. 6, 858, 2007. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos and A. A. Firsov, Nature 438, 197, 2005. 12. Y. Zhang, Y. Tan, H. L. Stormer and P. Kim, Nature 438, 201, 2005. 13. P. R. Wallace, Phys. Rev. 71, 622, 1947. 14. G. W. Semenoff, Phys. Rev.
2D materials for nanoelectronics by Michel Houssa, Athanasios Dimoulas, Alessandro Molle